to ? 92 1. emitter 2. collector 3. base jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors 2SC2274 transistor (npn) features z high breakdown voltage z high current z low saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 5 v collector cut-off current i cbo v cb =40v,i e =0 1 a emitter cut-off current i ebo v eb =4v,i c =0 1 a h fe(1) v ce =5v, i c =50ma 60 320 dc current gain h fe(2) * v ce =5v, i c =400ma 35 collector-emitter saturation voltage v ce(sat) i c =400ma,i b =40ma 0.6 v base-emitter saturation voltage v be (sat) i c =400ma,i b =40ma 1.2 v collector output capacitance c ob v cb =10v, f=1mhz 5 pf transition frequency f t v ce =10v,i c =10ma 120 mhz *pulse test classification of h fe(1) rank d e f range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 0.5 a p c collector power dissipation 600 mw r ja thermal resistance from junction to ambient 208 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 ' , ' h f ,2015
10 100 10 100 1 10 100 400 600 800 1000 0 25 50 75 100 125 150 0 200 400 600 800 11 01 0 0 10 100 1000 11 01 0 0 10 100 1000 200 400 600 800 1000 0.1 1 10 100 0123456789101112 0 30 60 90 120 11 0 0.1 1 10 100 1000 500 500 i c f t ?? common emitter v ce = 10v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 500 500 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 500 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =5v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 0.5ma 0.45ma 0.4ma 0.35ma 0.3ma 0.25ma 0.1ma 0.15ma 0.2ma i b =0.05ma c ob c ib f=1mhz i c =0/i e =0 t a =25 30 capacitance c t (pf) collector-base voltage v cb /v eb (v) c ob /c ib ? ? v cb /v eb www.cj-elec.com 2 ', ' h f ,2015 typical characteristics
min m ax min max a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 3 d,dec,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 4 d,dec,2015
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